Perpendicular-magnetic-anisotropy CoFeB racetrack memory
نویسندگان
چکیده
Related Articles Electric field effects in low resistance CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy Appl. Phys. Lett. 100, 122405 (2012) Spin-torque diode spectrum of ferromagnetically coupled (FeB/CoFe)/Ru/(CoFe/FeB) synthetic free layer J. Appl. Phys. 111, 07C917 (2012) Characterization of interlayer interactions in magnetic random access memory layer stacks using ferromagnetic resonance J. Appl. Phys. 111, 07C721 (2012) Design of a 270ps-access 7-transistor/2-magnetic-tunnel-junction cell circuit for a high-speed-search nonvolatile ternary content-addressable memory J. Appl. Phys. 111, 07E336 (2012) Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits
منابع مشابه
Microfabrication of magnetostrictive beams based on NiFe film doped with B and Mo for integrated sensor systems
Related Articles Precessional reversal in orthogonal spin transfer magnetic random access memory devices Appl. Phys. Lett. 101, 032403 (2012) Hot spin-wave resonators and scatterers J. Appl. Phys. 112, 013902 (2012) Magnetic domain wall transfer via graphene mediated electrostatic control Appl. Phys. Lett. 101, 013103 (2012) Perpendicular-magnetic-anisotropy CoFeB racetrack memory J. Appl. Phys...
متن کاملEnhanced tunneling magnetoresistance and perpendicular magnetic anisotropy in Mo/CoFeB/MgO magnetic tunnel junctions
Articles you may be interested in Perpendicular magnetic anisotropy in Ta|Co40Fe40B20|MgAl2O4 structures and perpendicular CoFeB|MgAl2O4|CoFeB magnetic tunnel junction Appl. Large enhanced perpendicular magnetic anisotropy in CoFeB/MgO system with the typical Ta buffer replaced by an Hf layer
متن کاملRapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB
The tunneling magnetoresistance and perpendicular magnetic anisotropy in CoFeB(1.1-1.2 nm)/ MgO/CoFeB(1.2-1.7 nm) junctions were found to be very sensitively dependent on annealing time. During annealing at a given temperature, decay of magnetoresistance occurs much earlier compared to junctions with in-plane magnetic anisotropy. Through a rapid thermal annealing study, the decrease of magnetor...
متن کاملA perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.
Magnetic tunnel junctions (MTJs) with ferromagnetic electrodes possessing a perpendicular magnetic easy axis are of great interest as they have a potential for realizing next-generation high-density non-volatile memory and logic chips with high thermal stability and low critical current for current-induced magnetization switching. To attain perpendicular anisotropy, a number of material systems...
متن کاملThermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy
The recent discovery of perpendicular magnetic anisotropy (PMA) at the CoFeB/MgO interface has accelerated the development of next generation high-density non-volatile memories by utilizing perpendicular magnetic tunnel junctions (p-MTJs). However, the insufficient interfacial PMA in the typical Ta/CoFeB/MgO system will not only complicate the p-MTJ optimization, but also limit the device densi...
متن کامل